| PART |
Description |
Maker |
| M391T2953BG0-CD5/CC M378T2953BG0-CD5/CC M378T3354B |
TVS UNIDIRECT 1500W 16V SMC 无缓冲DDR2的内存模
TVS UNIDIRECT 1500W 160V SMC
TVS UNI-DIR 160V 1500W SMC
TVS BIDIRECT 1500W 160V SMC
DDR2 Unbuffered SDRAM MODULE
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DSEC30-06 DSEC30-06B |
TVS 400W 100V UNIDIRECT SMA
HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
Fast Recovery Diodes
|
IXYS Corporation
|
| CD214B-T6.5CALF CD214B-T6.5ALF CD214A-T6.5ALF CD21 |
TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:100V; Breakdown Voltage, Vbr:111V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:33V; Breakdown Voltage, Vbr:36.7V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:150V; Breakdown Voltage, Vbr:167V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:20V; Breakdown Voltage, Vbr:22.2V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
CD214B Transient Voltage Suppressor Diode Series
|
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns.
3-in-1 silicon delay line. Output delay 30ns.
3-in-1 silicon delay line. Output delay 90ns.
3-in-1 silicon delay line. Output delay 12ns.
3-in-1 silicon delay line. Output delay 25ns.
Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No
3-in-1 silicon delay line. Output delay 70ns.
3-in-1 silicon delay line. Output delay 75ns.
3-in-1 silicon delay line. Output delay 50ns.
3-in-1 silicon delay line. Output delay 20ns.
3-in-1 silicon delay line. Output delay 80ns.
3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| 28F008C3 GT28F160C3B110 GT28F016C3B90 TE28F008C3T1 |
3 VOLT ADVANCED BOOT BLOCK 8- / 16- / 32-MBIT FLASH MEMORY FAMILY
STANDOFF HEX 6-32THR 2.5L ALUM
TVS, 6.5CA, BI, 6.5V, 400W, SMT
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 16 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 2 - Mbit闪存家庭
TVS UNIDIRECT 7.5V 400W SMA
|
Intel Corp.
Intel, Corp.
|
| MDA920A6 MDA920A4 MDA920A7 MDA920A2 MDA920A5 MDA92 |
1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 25 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Motorola Mobility Holdings, Inc.
|
| MBM29DL323BE90PBT MBM29DL323BE90TN MBM29DL323BE90T |
2M X 16 FLASH 2.7V PROM, 120 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 80 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
TVS UNIDIRECT 600W 51V SMB 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
MICRO SINGLE MODE FIBER TRANCEIVER, ST 32M的（4米8/2M × 16）位双操
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32M (4M x 8/2M x 16) BIT Dual Operation 32M的（4米8/2M × 16）位双操
KPT 6C 6#20 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 PORT MODULAR SWITCH ROHS VERSION
LE1416A BLANK FACE PLATE
4 PORT 100 MB SINGLE-MODEFIBER
XSNT SUPPR,ESD,060.00V,0603
MULTI-WAY IEC PANEL OUTLET
8 PORT MODULAR SWITCH
PCI 10BASE T/10 BASE FL NIC, S
TVS UNI-DIR 43V 600W SMB
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| 1N4467C JANS1N4467C JANS1N4493D 1N4476C JANTX1N447 |
12 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
150 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
30 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
36 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
20 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
130 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
10 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
56 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
8.2 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
15 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
200 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
43 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
91 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
47 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
7.5 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
75 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
120 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
100 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
68 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
110 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
180 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
MICROSEMI CORP-SCOTTSDALE
|
| JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode
Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70
CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
|
